Calculation of thermodynamic properties of metastable phases of the elementsKOUVETAKIS, J; BREWER, L.Journal of phase equilibria. 1993, Vol 14, Num 5, pp 563-571, issn 1054-9714Conference Paper

Designer hydride routes to 'Si-Ge'/(Gd,Er)₂O_3/Si(111) semiconductor-on-insulator heterostructuresWATKINS, Tylan; LIYING JIANG; SMITH, D. J et al.Semiconductor science and technology. 2011, Vol 26, Num 12, issn 0268-1242, 125005.1-125005.9Article

Crystal structure of tin tetrabromodioxane, SnBr₄.(C₄H₈O₂), a one dimensional polymer of Sn(IV)BAUER, M; KOUVETAKIS, J; GROY, T. L et al.Zeitschrift für Kristallographie. New crystal structures. 2002, Vol 217, Num 3, pp 421-422, issn 1433-7266Article

Crystal structure of bis(trimethylamine) dichlorodeuteroalane, [N(CH₃)₃]₂Cl₂DAlTORRISON, L; GROY, T. L; KOUVETAKIS, J et al.Zeitschrift für Kristallographie. New crystal structures. 2001, Vol 216, Num 3, pp 467-468, issn 1433-7266Article

Chemical vapor deposition of highly conductive boron-doped graphite from triphenyl boronKOUVETAKIS, J; MCELFRESH, M. W; BEACH, D. B et al.Carbon (New York, NY). 1994, Vol 32, Num 6, pp 1129-1132, issn 0008-6223Article

Surface and interface studies of GaN epitaxy on Si(111) via ZrB₂ buffer layersYAMADA-TAKAMURA, Yukiko; WANG, Z. T; FUJIKAWA, Y et al.Physical review letters. 2005, Vol 95, Num 26, pp 266105.1-266105.4, issn 0031-9007Article

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlNROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Applied surface science. 2003, Vol 212-13, pp 872-878, issn 0169-4332, 7 p.Conference Paper

Structural and optical properties of ZrB₂ and Hf_xZr_1-xB₂ films grown by vicinal surface epitaxy on Si(111) substratesROUCKA, R; AN, Y.-J; CHIZMESHYA, A. V. G et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1687-1690, issn 0038-1101, 4 p.Article

Epitaxial film growth of zirconium diboride on Si(001)ROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 364-371, issn 0022-0248, 8 p.Article

Ordered structures in unstrained, epitaxial Ge-Si-C filmsKOUVETAKIS, J; NESTING, D; O'KEEFFE, M et al.Chemistry of materials. 1998, Vol 10, Num 5, pp 1396-1401, issn 0897-4756Article

Synthesis and structural properties of the binary framework C-N compounds of Be, Mg, Al, and TlWILLIAMS, Darrick; PLEUNE, Brett; LEINENWEBER, Kurt et al.Journal of solid state chemistry (Print). 2001, Vol 159, Num 1, pp 244-250, issn 0022-4596Article

Structure of chloro (η⁵-pentamethylcyclopentadienyl)bis(trimethylphosphine)iridium(III) hexafluorophosphateKANER, R. B; KOUVETAKIS, J; MAYORGA, S. G et al.Acta crystallographica. Section C, Crystal structure communications. 1986, Vol 42, Num 4, pp 500-501, issn 0108-2701Article

Nucleation and growth of epitaxial ZrB₂(0001) on Si(111)HU, C.-W; CHIZMESHYA, A. V. G; TOLLE, J et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 554-563, issn 0022-0248, 10 p.Article

Experimental and theoretical study of deviations from Vegard's Law in the Sn_xGe_1-x systemCHIZMESHYA, A. V. G; BAUER, M. R; KOUVETAKIS, J et al.Chemistry of materials. 2003, Vol 15, Num 13, pp 2511-2519, issn 0897-4756, 9 p.Article

The disordered crystal structures of Zn(CN)₂ and Ga(CN)₃WILLIAMS, D. J; PARTIN, D. E; LINCOLN, F. J et al.Journal of solid state chemistry (Print). 1997, Vol 134, Num 1, pp 164-169, issn 0022-4596Article

A novel graphite-like material of composition BC₃, and nitrogen-carbon graphitesKOUVETAKIS, J; KANER, R. B; SATTLER, M. L et al.Journal of the Chemical Society. Chemical communications. 1986, Num 24, pp 1758-1759, issn 0022-4936Article

Molecular approaches to p- and n-nanoscale doping of Ge_1-ySn_y semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

Raman scattering in Ge_1-ySn_y alloysD'COSTA, V. R; TOLLE, J; ROUCKA, R et al.Solid state communications. 2007, Vol 144, Num 5-6, pp 240-244, issn 0038-1098, 5 p.Article

Synthesis of molecular precursors to carbon-nitrogen-phosphorus polymeric systemsMCMURRAN, J; KOUVETAKIS, J; NESTING, D. C et al.Chemistry of materials. 1998, Vol 10, Num 2, pp 590-593, issn 0897-4756Article

Novel synthetic route to carbon nitrideTODD, M; KOUVETAKIS, J; GROY, T. L et al.Chemistry of materials. 1995, Vol 7, Num 7, pp 1422-1426, issn 0897-4756Article

Novel synthetic routes to carbon-nitrogen thin filmsKOUVETAKIS, J; BANDARI, A; TODD, M et al.Chemistry of materials. 1994, Vol 6, Num 6, pp 811-814, issn 0897-4756Article

Synthesis of ethynyl-substituted precursors to carbon-nitrogen-sulfur extended structures : reactions of C₃N₃F₃ and C₂N₂SCl₂ with alkali-metal (trimethylsilyl)acetylidesKOUVETAKIS, J; GROTJAHN, D; BECKER, P et al.Chemistry of materials. 1994, Vol 6, Num 5, pp 636-639, issn 0897-4756Article

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsD'COSTA, V. R; FANG, Y.-Y; TOLLE, J et al.Thin solid films. 2010, Vol 518, Num 9, pp 2531-2537, issn 0040-6090, 7 p.Conference Paper

Highly strained metastable structures and selective area epitaxy of Ge-rich Ge_1-xSi_x/Si(100) materials using nanoscale building blocksFANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Solid state communications. 2009, Vol 149, Num 1-2, pp 78-81, issn 0038-1098, 4 p.Article

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)FANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Thin solid films. 2008, Vol 516, Num 23, pp 8327-8332, issn 0040-6090, 6 p.Article